Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots

摘要

The near-field scanning optical microscopy images of excitonic wavefunctionsin self-assembled InAs/GaAs quantum dots are calculated using an empiricalpseudopotential method, followed by the configuration interaction (CI)treatment of many-particle effects. We show the wavefunctions of neutralexciton $X^0$ of different polarizations, and compare them to those of thebiexciton $XX$ and the charged excitons $X^+$ and $X^-$. We further show thatthe exciton $X(P_h \to S_e)$ transition which is forbidden in the far-fieldphotoluminescence has comparable intensities to that of $X(S_h \to S_e)$transition in the near-field photoluminescence .